Roughness reducing film at interface, materials for forming...

Details Roughness reducing film at interface, materials for forming... Roughness reducing film at interface, materials for forming...

2011-04-19

2011-04-19

Ghyka, Alexander G (Department: 2812)

Active solid-state devices (e.g., transistors, solid-state diode

With means to control surface effects

Insulating coating

C257SE21242

Reexamination Certificate

active

07928536

ABSTRACT:
Techniques for obtaining a wiring layer with a high TDDB resistance and little leakage current, and accordingly, for manufacturing a highly reliable semiconductor device with a small electric power consumption are provided, in which an interfacial roughness reducing film is formed which is in contact with an insulator film and also in contact with a wiring line on the other side surface thereof, and has an interfacial roughness between the wiring line and the interfacial roughness reducing film smaller than that between the insulator film and the interfacial roughness reducing film.

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Chinese Office Action dated Sep. 26, 2008, issued in corresponding Chinese Patent Application No. 200710089088.9.

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