Roughened sidewall ridge for high power fundamental mode semicon

Coherent light generators – Particular resonant cavity – Distributed feedback

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372 43, 372 50, 372 45, 385131, H01S 308, G02B 612

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053115392

ABSTRACT:
A semiconductor ridge waveguide laser structure with a roughened sidewall ridge that includes a substrate and an active layer disposed between lower and upper cladding layers. The structure further includes a waveguide ridge which comprises a contact layer and a trapezoidal ridge portion 16 of the upper cladding layer. The trapezoidal ridge portion has roughened sidewalls which provides low contact resistance.

REFERENCES:
patent: 4464762 (1984-08-01), Fuvuya
patent: 4622673 (1986-11-01), Tsang
patent: 4792200 (1988-12-01), Amann et al.
patent: 4805184 (1989-02-01), Fiddyment et al.
patent: 4837775 (1989-06-01), Andrews et al.
patent: 4845014 (1989-07-01), Ladany
patent: 4888784 (1989-12-01), Hirata
patent: 4993036 (1991-02-01), Ikeda et al.
patent: 5013493 (1992-04-01), Buchmann et al.
patent: 5032219 (1991-07-01), Buchmann et al.
patent: 5059552 (1991-10-01), Harder et al.
patent: 5084892 (1992-01-01), Hayakawa
patent: 5093884 (1992-03-01), Gidon et al.
patent: 5132751 (1992-07-01), Shibata et al.
patent: 5179566 (1993-01-01), Iwano et al.
patent: 5182788 (1993-01-01), Tanaka
High-Power Ridge-Wave Guide Al Ga As Grin-Sch Laser Diode, C. Harder et al Electronics Letters, Sep. 25, 1986, vol. 22, No. 20 pp. 1081-1082.

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