Roughened polysilicon surface capacitor electrode plate for high

Details Roughened polysilicon surface capacitor electrode plate for high Roughened polysilicon surface capacitor electrode plate for high

1991-07-10

1992-05-05

Chaudhuri, Olik

Fishing, trapping, and vermin destroying

437 48, 437 52, 29 2503, H01L 2170

Patent

active

051107520

ABSTRACT:
A method of fabricating a microminaturized capacitor having an electrode that is roughened to increase the effective area per unit area and resulting structure, particularly adapted for use in high density dynamic random access memory devices. The method involves depositing a conductive polycrystalline silicon layer. The depositing a metal such as a refractory metal over the polysilicon layer. The composite layer is heated to form a metal silicide and roughened polycrystalline silicon surface while the grains also grow large. The metal silicide is removed, leaving a roughened surface. The capacitor dielectric layer is deposited upon the roughened surface. The second conductive polycrystalline silicon layer is now formed upon said dielectric layer to complete the capacitor.

REFERENCES:
patent: 5043780 (1991-08-01), Fazan et al.
patent: 5049517 (1991-09-01), Liu et al.
Fazan et al., "Electrical characterization of textured interpoly capacitors for advanced stacked DRAMS", IEDM 1990 Tech. Digest, pp. 663-666.
M. Sakao et al., "A Capacitor-over-bit-line (COB) cell with a Hemispherical-grain . . .", IEDM 1990 Tech. Digest, pp. 655-658.
Yoshimara et al., "Rugged surface poly-Si electrode . . .", IEDM 1990 Technical Digest, pp. 663-666.

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