Single-crystal – oriented-crystal – and epitaxy growth processes; – Apparatus – For crystallization from liquid or supercritical state
Reexamination Certificate
2004-09-15
2008-03-18
Kunemund, Robert (Department: 1792)
Single-crystal, oriented-crystal, and epitaxy growth processes;
Apparatus
For crystallization from liquid or supercritical state
C117S082000, C117S083000, C117S084000
Reexamination Certificate
active
07344598
ABSTRACT:
A rotationally-vibrated unidirectional solidification crystal growth system comprises a furnace, a crucible, a rotational-vibration device including a mounting holder, a motor and a vibrating apparatus. The furnace contains a high temperature portion, a thermal isolation portion and a low temperature portion. The crucible connected to the rotational-vibration device within the furnace has a seed well down to a crystal growth arena. The crystal is grown as the ambient temperature profile moving from high to low, which can be achieved through a relative movement between the furnace and the crucible. That is either the furnace or the crucible is undergoing a top-down movement. The rotational-vibration device offers the crucible the required rotation and angular vibration, with a vibrating frequency no less than 0.2 Hz.
REFERENCES:
patent: 6645294 (2003-11-01), Lan et al.
patent: 2003/0089301 (2003-05-01), Kishida et al.
patent: 2003/0131789 (2003-07-01), Amemiya
Lan Chune-Wen
Yu Wan-Chin
Kunemund Robert
National Taiwan University
Schmeiser Olsen & Watts
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