Rotation rate sensor

Details Rotation rate sensor Rotation rate sensor

1991-09-12

1994-01-04

Chapman, John E.

Measuring and testing

Speed, velocity, or acceleration

Angular rate using gyroscopic or coriolis effect

G01P 904

Patent

active

052750477

ABSTRACT:
A rotation rate sensor has a multi-layer structure, with an oscillatory body (13) formed in one carrier layer (10). The body can be stimulated to oscillate in a first oscillation direction (1). On top of this body (13), a further structural element (21), which is deflectable normal to the major surface of the carrier (10) and which serves to detect Coriolis acceleration, is located. There is a device for capacitive or piezo-resistive measurement of the deflection of the structural element. Preferably, the entire structure is fabricated from a silicon wafer, so that the measurement device can be integrated onto the sensor element.

REFERENCES:
patent: 4654663 (1987-03-01), Alsenz et al.
patent: 4744248 (1988-05-01), Stewart
patent: 4836023 (1989-06-01), Oikawa
William C. Tang, Tu-Cuong H. Nguyen, and Roger T. Howe, "Laterally Driven Polysilicon Resonant Microstructures", IEEE 1989, pp. 53-59.
W. Kern, "Chemical Etching of Silicon, Germanium, Gallium Arsenide & Gallium Phosphide" RCA Review, vol. 39, Jun. 1978, pp. 278-308.

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