Chemistry: electrical and wave energy – Apparatus – Coating – forming or etching by sputtering
Patent
1992-07-23
1993-10-12
Nguyen, Nam
Chemistry: electrical and wave energy
Apparatus
Coating, forming or etching by sputtering
20419212, 20419232, 20429819, 20429821, 20429822, 20429837, C23C 1434
Patent
active
052521940
ABSTRACT:
A magnetron sputter source providing a predetermined erosion distribution over the surface of a sputter target material is described. When the distribution is uniform, close coupling of the sputter target with the substrate to be coated is achieved, resulting in improved collection efficiency of the sputtered material by the wafer and improved film thickness uniformity. Elimination of erosion grooves provide for greater target consumption and longer target life. The cathode magnetron sputter source includes a rotating magnet assembly of a specific shape and a specific magnetic strength provides the desired erosion distribution. The target may be dished to improve uniformity near the periphery of the wafer.
The resulting magnetron cathode is used for the deposition of thin films. Further applications of uniform magnetron erosion or preselected erosion include uniform or preselected magnetron sputter etch or reactive ion etch and concurrent deposition and etch.
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Anderson Robert L.
Cochran Ronald R.
Demaray Richard E.
Helmer John C.
Hoffman, Jr. Vance E.
Nguyen Nam
Varian Associates Inc.
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