Drying and gas or vapor contact with solids – Process – By centrifugal force
Reexamination Certificate
2006-09-12
2006-09-12
Gravini, S. (Department: 3749)
Drying and gas or vapor contact with solids
Process
By centrifugal force
C034S381000, C034S058000, C034S080000
Reexamination Certificate
active
07103990
ABSTRACT:
It is an object of the present invention to provide a rotation type silicon wafer cleaning device to further raise the stability of a silicon wafer by providing a better hydrogen termination on the silicon wafer after completion of chemical and pure water cleaning treatments.According to the present invention, a rotation type silicon wafer cleaning device has a silicon wafer support/rotation driving mechanism inside the case body for cleaning the silicon wafer at the post chemical cleaning with pure water, drying and hydrogen termination treatments on the outer surface of a silicon wafer is performed by means of installing a silicon wafer drying device comprising a gas supply panel attached to a case body to supply a mixed gas of the hydrogen gas and inactive gas containing a hydrogen gas of more than 0.05%, a mixed gas supply pipe coupled to a gas mixer of the afore-mentioned gas supply panel at one end, a mixed gas heating device to heat the mixed gas in the afore-mentioned gas supply pipe, and a hydrogen radical formation apparatus equipped with a platinum coating film to form hydrogen radical at the gas contacting part where to a high temperature gas heated with the afore-mentioned mixed gas heating device touches, thus to gush out the mixed gas containing hydrogen radical formed with the afore-mentioned radical formation apparatus onto the rotating silicon wafer after cleaning is completed.
REFERENCES:
patent: 5212050 (1993-05-01), Mier et al.
patent: 5985811 (1999-11-01), Masayuki et al.
patent: 714120 (1996-05-01), None
patent: 2000-31109 (2000-01-01), None
International Search Report, completed Dec. 16, 2003.
Fujita Takumi
Ikeda Nobukazu
Kawada Koji
Minami Yukio
Morimoto Akihiro
Fujikin Incorporated
Gravini S.
Griffin & Szipl, P.C.
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