Room temperature wafer cleaning process

Details Room temperature wafer cleaning process Room temperature wafer cleaning process

1992-09-02

1994-05-03

Dees, Jose G.

Cleaning and liquid contact with solids

Processes

For metallic, siliceous, or calcareous basework, including...

134 3, 134 26, 134 28, 134 29, 134 34, 134 30, C23G 102, C23G 5032, B08B 302

Patent

active

053084004

ABSTRACT:
A new method of removing particles from the surface of a wafer is described. The key to the method is a room temperature ammonium hydroxide-hydrogen peroxide solution. The wafer is immersed in hydrofluoric acid, then, while the wafer is still wet, it is either immersed in an ammonium hydroxide-hydrogen peroxide solution or the ammonium hydroxide-hydrogen peroxide solution is sprayed onto the wafer. Since the cleaning solution is at room temperature, the process is safer. The bath life is prolonged because the solution does not break down as it would at higher temperatures.

REFERENCES:
patent: 4264374 (1981-04-01), Beyer et al.
patent: 4569722 (1986-02-01), Maury et al.
patent: 4778532 (1988-10-01), McConnell et al.
patent: 5129955 (1992-07-01), Tanaka
patent: 5176756 (1993-01-01), Nakashima et al.
T. Ohmi, H. Mishima, T. Mizuniwa & M. Abe, "Developing Contamination-Free Cleaning and Drying Technologies", in Microcontamination, May 1989, pp. 25-32, 108.

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