Room temperature two color infrared detector

Radiant energy – Invisible radiant energy responsive electric signalling – Infrared responsive

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338 18, 357 30, G01J 100

Patent

active

042245206

ABSTRACT:
An amorphous film (44) of a photoresponsive semi-conducting material such germanium-telluride deposited upon a thick silicon dioxide layer (40) formed on a silicon chip substrate (38). The silicon chip (38) underlying the central region of the amorphous film (44) is etched through to the silicon dioxide layer (40) to define a trough (48) thermally isolating the central region of the silicon dioxide layer (40).

REFERENCES:
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patent: 3743995 (1973-07-01), Riedl et al.
patent: 3831029 (1974-08-01), Jones et al.
patent: 3898605 (1975-08-01), Burns
patent: 4001586 (1977-01-01), Fraioli
patent: 4029962 (1977-06-01), Chapman
patent: 4060729 (1977-11-01), Byer et al.
patent: 4115692 (1978-09-01), Balcerak et al.

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