Active solid-state devices (e.g. – transistors – solid-state diode – Thin active physical layer which is – Ballistic transport device
Patent
1994-01-07
1995-08-15
Saadat, Mahshid D.
Active solid-state devices (e.g., transistors, solid-state diode
Thin active physical layer which is
Ballistic transport device
257 26, 257194, 257198, 257769, H01L 29161, H01L 2972, H01L 2712
Patent
active
054421942
ABSTRACT:
A hot-electron transistor (10) is formed on substrate (12) having an outer surface. The present transistor includes subcollector layer (14) comprising Indium Gallium Arsenide formed outwardly from the outer surface of substrate (12). Collector barrier layer (18) comprising Indium Aluminum Gallium Arsenide is outwardly formed from subcollector layer (14), and collector barrier layer (18) minimizes leakage current in transistor (10). Outwardly from collector barrier layer (18) is formed base layer (20) comprising Indium Gallium Arsenide. Tunnel injector layer (21) comprising Aluminum Arsenide for ballistically transporting electrons in transistor (10) is outwardly formed from base layer (20), and emitter layer (24) comprising Indium Aluminum Arsenide is outwardly formed from tunnel injector layer (21).
REFERENCES:
patent: 4868418 (1989-09-01), Imamura et al.
patent: 4901122 (1990-02-01), Xu et al.
patent: 5100835 (1992-03-01), Zheng
patent: 5214297 (1993-05-01), Imamura et al.
patent: 5266818 (1993-11-01), Tsuda et al.
Yokoyama et al, "Tunneling Hot Electron Transistor Using GaAs/AlGaAs Hetero Junctions," Jap. J. Appl. Phys., vol. 23, No. 5, May 1984, pp. L311-L312.
Yokoyama, Naoki, et al., Resonant-Tunneling Hot-Electron Transistors, Hot Carriers in Semiconductor Nanostructures Physics and Applications, 1992, pp. 443-466.
Yokoyama, Naoki, et al., A New Functional, Resonant-Tunneling Hot Electron Transistor (RHET), Japanese Journal of Applied Physics, vol. 24, No. 11, Nov. 1985, pp. L853-L854.
Heiblum, M., et al., Evidence of Hot-Electron Transfer into an Upper Valley in GaAs, Physical Review Letters, vol. 56, No. 26, Feb. 1986, pp. 2854-2857.
Heiblum, M., et al., Direct Observation of Ballistic Transport in GaAs, Physical Review Letters, vol. 55, No. 20, Aug. 1985, pp. 2200-2203.
Donaldson Richard L.
Hoel Carlton H.
Saadat Mahshid D.
Texas Instruments Incorporated
LandOfFree
Room-temperature tunneling hot-electron transistor does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Room-temperature tunneling hot-electron transistor, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Room-temperature tunneling hot-electron transistor will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-2183889