Room temperature luminescent Erbium Oxide thin films for...

Details Room temperature luminescent Erbium Oxide thin films for... Room temperature luminescent Erbium Oxide thin films for...

2005-01-25

2005-01-25

Talbot, Brian K. (Department: 1762)

Coating processes

Electrical product produced

Fluorescent or phosphorescent base coating

C427S074000, C427S126300, C427S166000, C427S380000, C204S192150, C204S192260

Reexamination Certificate

active

06846509

ABSTRACT:
A system for producing Erbium Oxide thin films with increased photoluminescence. The system includes a depositing stage for forming Erbium Oxide molecules by reacting Erbium sputtered atoms with O2in a gas phase and creating the Erbium Oxide thin film by depositing the Erbium Oxide molecules on a substrate coated with Silicon Oxide. The system further includes an annealing stage for annealing the Erbium Oxide thin films by utilizing a low temperature treatment for a specified amount of time and temperature followed by a high temperature treatment for another specified amount of time and temperature, wherein the crystallinity of the thin films has improved.

REFERENCES:
patent: 6194818 (2001-02-01), Sumi et al.
patent: 6201271 (2001-03-01), Okutoh et al.
patent: 6416584 (2002-07-01), Won et al.
patent: 17217 (1999-01-01), None
“Resonant excitation of visible photoluminescence from an erbium-oxide overlayer on Si,” Kasuya et al.Applied Physics Letters. Nov. 10, 1997. vol. 71, No. 19.
“The Chemical Environment of Er3+In a-Si:Er:H AND a-Si:Er:O:H,” Tessler et al.Materials Research Society. 1998. vol. 524.

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