Room temperature ferromagnetic semiconductor grown by plasma...

Details Room temperature ferromagnetic semiconductor grown by plasma... Room temperature ferromagnetic semiconductor grown by plasma...

2006-06-20

2006-06-20

Dickey, Thomas L. (Department: 2826)

Semiconductor device manufacturing: process

Having magnetic or ferroelectric component

C438S034000, C257S075000, C365S158000, C365S171000

Reexamination Certificate

active

07063986

ABSTRACT:
A 3 group–5 group compound ferromagnetic semiconductor, comprising one material ‘A’ selected from the group of Ga, Al and In and one material ‘B’ selected from the group consisting of N and P, wherein one material ‘C’ selected from the group consisting of Mn, Mg, Co, Fe, Ni, Cr and V is doped as a material for substituting the material ‘A’, the compound semiconductor has a single phase as a whole. The ferromagnetic semiconductor can be fabricated by a plasma-enhance molecular beam epitaxy growing method and since it shows the ferromagnetic characteristics at a room temperature, it can be applied as various spin electron devices.

REFERENCES:
patent: 2004/0072425 (2004-04-01), Cui et al.
patent: 2005/0202614 (2005-09-01), Spruytte et al.
patent: 2005/0269593 (2005-12-01), Chowdhury et al.
patent: 11-238924 (1999-08-01), None
patent: 2000-357389 (2000-12-01), None
patent: 2001-148533 (2001-05-01), None
patent: 2002-016010 (2002-01-01), None
patent: 2002-198615 (2002-07-01), None
patent: 2003-137698 (2003-05-01), None
patent: 2003-528456 (2003-09-01), None
Cui et al. U.S. Appl. No. 60/364,989 filed Mar. 14, 2002.
Sonoda, Saki, et al., “Properties of Ferromagnetic Ga1-xMnxN Films Grown by Ammonia-MBE”, IEEE Transactions on Magnetics, Sep. 2002, vol. 38, No. 5, pp. 2859-2862.

Affiliated with

Also associated with

Rating

Room temperature ferromagnetic semiconductor grown by plasma... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Room temperature ferromagnetic semiconductor grown by plasma..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Room temperature ferromagnetic semiconductor grown by plasma... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3628042