Room temperature drift suppression via soft program after erase

Details Room temperature drift suppression via soft program after erase Room temperature drift suppression via soft program after erase

2011-05-17

2011-05-17

Hur, J. H. (Department: 2824)

Static information storage and retrieval

Floating gate

Particular connection

C365S185290, C365S185300, C365S185180, C365S185020

Reexamination Certificate

active

07944746

ABSTRACT:
Providing for suppression of room temperature electronic drift in a flash memory cell is provided herein. For example, a soft program pulse can be applied to the flash memory cell immediately after an erase pulse. The soft program pulse can help to mitigate dipole effects caused by non-combined electrons and holes in the memory cell. Specifically, by utilizing a relatively low gate voltage, the soft program pulse can inject electrons into the flash memory cell proximate a distribution of uncombined holes associated with the erase pulse in order to facilitate rapid combination of such particles. Rapid combination in this manner reduces dipole effects caused by non-combined distributions of opposing charge within the memory cell, reducing room temperature program state drift.

REFERENCES:
patent: 6285588 (2001-09-01), Fastow
patent: 6643181 (2003-11-01), Sofer et al.
patent: 6834012 (2004-12-01), He et al.
patent: 2005/0073886 (2005-04-01), Hamilton et al.
patent: 2005/0237813 (2005-10-01), Zous et al.

Affiliated with

Also associated with

Rating

Room temperature drift suppression via soft program after erase does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Room temperature drift suppression via soft program after erase, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Room temperature drift suppression via soft program after erase will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2692011