Coherent light generators – Particular active media – Semiconductor
Patent
1997-05-13
1998-09-01
Bovernick, Rodney B.
Coherent light generators
Particular active media
Semiconductor
372 44, H01S 319
Patent
active
058020900
ABSTRACT:
A semiconductor laser diode which emits radiation in the 2-5 micrometer wavelength range and operates at room temperature. The laser diode includes an active layer of an In.sub.x Ga.sub.1-x As.sub.y Sb.sub.1-y alloy and a separate cladding layer on each side of the active layer. One of the cladding layers is of n-type conductivity and the other cladding layer is of p-type conductivity. At least the n-type cladding layer, and preferably both cladding layers, are of either an InAlPSb or an InGaPSb alloy.
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"33.06.mu.m InGaAsSb/InPSb Diode Lasers Grown By Organometallic Vapor-Phase Epitaxy" R. M. Menna, et al. App. Phys. Lett. 59(17) 21 Oct. 1991 pp. 2127-2129.
"2.7-.mu.m InGaAsSb/AlGaAsSb Laser Diodes With Continuous-Wave Operation Up To -39.degree.C" D. Z. Garbuzov, et al Applied Physics Letter vol. 67 4 Sep. 1995 No. 10 pp. 1346-1348.
"Laser Diodes And Applications" R. Martinelli, et all SPIE vol. 2382 8-10 Feb. 1995 pp. 250-261.
Martinelli Ramon Ubaldo
York Pamela Kay
Bovernick Rodney B.
Burke William J.
David Sarnoff Research Center Inc.
Phan Luong-Quyen T.
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