Room temperature 3-5 micrometer wavelength HgCdTe heterojunction

Details Room temperature 3-5 micrometer wavelength HgCdTe heterojunction Room temperature 3-5 micrometer wavelength HgCdTe heterojunction

1996-10-04

1999-12-07

Jackson, Jr., Jerome

Active solid-state devices (e.g., transistors, solid-state diode

Incoherent light emitter structure

With particular dopant concentration or concentration profile

257 94, 257 96, 257102, 257103, H01L 3300, H05B 3314

Patent

active

059988096

ABSTRACT:
A room temperature emitter (10) operating in the 3-5 .mu.m wavelength range is provided. The emitter (10) includes a substrate (12) formed of a material selected from the group comprising cadmium telluride or cadmium zinc telluride. An epitaxial active layer (14) is formed over the substrate (12) from mercury cadmium telluride. The active layer (14) may be either a p-type or an n-type layer. The active layer (14) is doped with a predetermined concentration of dopant selected from the group comprising indium and arsenic. More particularly, if the active layer (14) is a p-type layer, it is doped with arsenic in a concentration between approximately 1.times.10.sup.16 atoms/cm.sup.3 and 1.times.10.sup.17 atoms/cm.sup.3. If the active layer (14) is an n-type layer, it is doped with indium in a concentration between approximately 5.times.10.sup.14 atoms/cm.sup.3 to 1.times.10.sup.15 atoms/cm.sup.3. A first epitaxial confinement layer (16) is formed from mercury cadmium telluride. The first confinement layer (16) is formed over the active layer (14). The first confinement layer (16) may be either an n.sup.+ layer or a p.sup.+ layer, depending upon whether the active layer (14) is a p-type or n-type layer. A metal layer (18) is formed over the first confinement layer (16).

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