ROM With poly-Si to mono-Si diodes

Details ROM With poly-Si to mono-Si diodes ROM With poly-Si to mono-Si diodes

1980-12-22

1983-08-16

Larkins, William D.

Static information storage and retrieval

Magnetic bubbles

Guide structure

357 45, 365105, H01L 2704, G11C 1706

Patent

active

043994504

ABSTRACT:
In a diode matrix of a permanent memory (ROM) the word line and bit line system is formed by a system of strip-shaped zones of one conductivity type provided in the silicon body and in the another system is formed by polycrystalline silicon tracks of the opposite conductivity type provided on the surface and forming mono-poly p-n junctions with the strip-shaped zones. High packing density and high speed are obtained.

REFERENCES:
patent: 4070654 (1978-01-01), Tachi
patent: 4099260 (1978-07-01), Lynes et al.
patent: 4148055 (1979-04-01), Edlinger et al.
patent: 4160989 (1979-07-01), deBribisson et al.
Davies et al., IEEE J. of Solid State Circuits, vol. SC 12, No. 4, Aug. 1977, pp. 367-375.

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