Static information storage and retrieval – Read only systems – Semiconductive
Patent
1998-01-13
1998-12-08
Nelms, David C.
Static information storage and retrieval
Read only systems
Semiconductive
365175, 438328, G11C 1706
Patent
active
058479880
ABSTRACT:
A process and structure are disclosed for a programmable array for use in a read-only memory comprising diode elements and shorted diode elements. The elements are connected across bit and wordlines. The invention utilizes lateral polysilicon diodes and metal silicide layer bridging the junction of pre-selected diodes to short pre-selected diode elements. Programming is accomplished by either forming the silicide layer across the junctions of pre-selected diodes or removing the silicide layer from the junctions of pre-selected diodes.
REFERENCES:
patent: 3671948 (1972-06-01), Cassen et al.
patent: 3806896 (1974-04-01), Mar
patent: 4099260 (1978-07-01), Lynes et al.
patent: 4425379 (1984-01-01), Vora et al.
patent: 4442507 (1984-04-01), Roesner
patent: 4516223 (1985-05-01), Erickson
patent: 4569120 (1986-02-01), Stacy et al.
patent: 4575743 (1986-03-01), Hashimoto
patent: 4598386 (1986-07-01), Roesner et al.
patent: 4608672 (1986-08-01), Roberts et al.
patent: 4616404 (1986-10-01), Wang et al.
patent: 4884238 (1989-11-01), Lee et al.
patent: 5166901 (1992-11-01), Shaw et al.
patent: 5200652 (1993-04-01), Lee
patent: 5257224 (1993-10-01), Nojiri et al.
patent: 5272370 (1993-12-01), French
patent: 5313087 (1994-05-01), Chan et al.
patent: 5379250 (1995-01-01), Harshfield
Babson Gordon M.
Brouillette Allen W.
Evans Richard J.
Finch Robert J.
Noel Philip H.
Ho Hoai V.
International Business Machines - Corporation
Nelms David C.
Shkurko Eugene I.
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