ROM memory component featuring reduced leakage current, and...

Static information storage and retrieval – Read only systems

Reexamination Certificate

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

C365S185010, C365S185240, C365S185250, C365S189011

Reexamination Certificate

active

07633787

ABSTRACT:
The invention relates to a ROM memory cell comprising a first terminal connected to a word line, comprising a second terminal and comprising a third terminal, the second terminal being connected to a bit line and/or the third terminal being connected to a supply line for precharging the third terminal. The ROM memory cell according to the invention is distinguished by the fact that the same reference potential is in each case applied to the first terminal, the second terminal and/or the third terminal in a standby operating mode. The invention furthermore relates to a ROM memory component comprising such ROM memory cells, and to a method for reading from the ROM memory cell.

REFERENCES:
patent: 4912674 (1990-03-01), Matsumoto et al.
patent: 5255235 (1993-10-01), Miyatake
patent: 5812461 (1998-09-01), Komarek et al.
patent: 5936883 (1999-08-01), Kurooka et al.
patent: 6549449 (2003-04-01), Takashima
patent: 6711058 (2004-03-01), Hirano
patent: 7016216 (2006-03-01), Oikawa et al.
patent: 2001/0053107 (2001-12-01), Kohno
patent: 2004/0022084 (2004-02-01), Sung et al.
patent: 2004/0151045 (2004-08-01), Kanai
patent: 103 35 385 (2004-02-01), None
patent: 0280883 (1988-01-01), None
patent: WO 03/071553 (2003-08-01), None

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

ROM memory component featuring reduced leakage current, and... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with ROM memory component featuring reduced leakage current, and..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and ROM memory component featuring reduced leakage current, and... will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-4133856

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.