Rom cell with reduced drain capacitance

Details Rom cell with reduced drain capacitance Rom cell with reduced drain capacitance

1994-03-17

1998-03-24

Clawson, Jr., Joseph E.

Static information storage and retrieval

Read only systems

Semiconductive

365178, 257336, G11C 1712

Patent

active

057320128

ABSTRACT:
A ROM cell array in which the drains are more lightly doped than the sources. This reduces the worst-case capacitance seen by the bitlines, and consequently reduces the access time of the memory.

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