Roll-vortex plasma chemical vapor deposition system

Details Roll-vortex plasma chemical vapor deposition system Roll-vortex plasma chemical vapor deposition system

2006-05-25

2008-12-16

Cleveland, Michael (Department: 1792)

Coating apparatus

Gas or vapor deposition

With treating means

C118S7230AN, C118S663000, C118S719000, C118S7230ER, C118S602000, C156S345430, C156S345440, C156S345450, C156S345460, C156S345470, C156S345260, C156S345240

Reexamination Certificate

active

07464663

ABSTRACT:
A system comprises a processing chamber for maintaining a hydrogen plasma at low pressure. The processing chamber has a long, wide, thin geometry to favor deposition of thin-film silicon on sheet substrates over the chamber walls. The sheet substrates are moved through between ends. A pair of opposing radio frequency electrodes above and below the workpieces are electrically driven hard to generate a flat, pancaked plasma cloud in the middle spaces of the processing chamber. A collinear series of gas injector jets pointed slightly up on a silane-jet manifold introduce 100% silane gas at high velocity from the side in order to roll the plasma cloud in a coaxial vortex. A second such silane-jet manifold is placed on the opposite side and pointed slightly down to further help roll the plasma and maintain a narrow band of silane concentration. A silane-concentration monitor observes the relative amplitudes of the spectral signatures of the silane and the hydrogen constituents in the roll-vortex plasma and outputs a process control feedback signal that is used to keep the silane in hydrogen concentration at about 6-7%.

REFERENCES:
patent: 4460673 (1984-07-01), Sukigara et al.
patent: 4466380 (1984-08-01), Jansen et al.
patent: 6143078 (2000-11-01), Ishikawa et al.
patent: 6390020 (2002-05-01), Hu et al.
patent: 2002/0073922 (2002-06-01), Frankel et al.

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