Rod target for arc evaporation source, manufacturing method...

Details Rod target for arc evaporation source, manufacturing method... Rod target for arc evaporation source, manufacturing method...

2006-04-18

2006-04-18

Versteeg, Steven (Department: 1753)

Chemistry: electrical and wave energy

Apparatus

Coating, forming or etching by sputtering

C204S298410

Reexamination Certificate

active

07029560

ABSTRACT:
In the rod target for an arc evaporation source, of which the outer peripheral surface is used as an evaporation surface, the opposite ends thereof in the longitudinal direction thereof are each formed thicker than the central part thereof. The length of the thicker portion at each of the opposite ends in the longitudinal direction is set to be not less than 75 mm nor more than 200 mm. Work with a uniform film thickness is provided, and the availability of a rod target is improved, thereby preventing the rod target from going to waste.

REFERENCES:
patent: 3400070 (1968-09-01), Naff
patent: 4505947 (1985-03-01), Vukanovic et al.
patent: 0 658 634 (1995-06-01), None
patent: 1 081 247 (2000-08-01), None
patent: 52-95581 (1977-08-01), None
patent: 7-173617 (1995-07-01), None
patent: 2000-80466 (2000-03-01), None
English translation of JP 6-220617.
Patent Abstracts of Japan, JP 52-095581, Aug. 11, 1977.
Patent Abstracts of Japan, JP 06-220617, Aug. 8, 1994.

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