Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – In combination with or also constituting light responsive...
Reexamination Certificate
2006-06-14
2011-11-08
Landau, Matthew (Department: 2813)
Active solid-state devices (e.g., transistors, solid-state diode
Incoherent light emitter structure
In combination with or also constituting light responsive...
C257SE31032, C257SE31038, C257S079000, C257S082000, C257S088000, C257S091000, C257S099000, C257S459000
Reexamination Certificate
active
08053788
ABSTRACT:
A rod-shaped semiconductor device having a light-receiving or light-emitting function is equipped with a rod-shaped substrate made of p-type or n-type semiconductor crystal, a separate conductive layer which is formed on a part of the surface of the substrate excluding a band-shaped part parallel to the axis of the substrate and has a different conduction type from the conduction type of the substrate, a pn-junction formed with the substrate and separate conductive layer, a band-shaped first electrode which is formed on the surface of the band-shaped part on the substrate and ohmic-connected to the substrate, and a band-shaped second electrode which is formed on the opposite side of the first electrode across the shaft of said substrate and ohmic-connected to the separate conductive layer.
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Booker Vicki B
Jordan and Hamburg LLP
Kyosemi Corporation
Landau Matthew
LandOfFree
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