Robust structure for HVPW Schottky diode

Details Robust structure for HVPW Schottky diode Robust structure for HVPW Schottky diode

2008-12-31

2010-10-05

Prenty, Mark (Department: 2822)

Active solid-state devices (e.g., transistors, solid-state diode

Schottky barrier

With means to prevent edge breakdown

C257SE29338, C438S570000

Reexamination Certificate

active

07808069

ABSTRACT:
A high-voltage Schottky diode including a deep P-well having a first width is formed on the semiconductor substrate. A doped P-well is disposed over the deep P-well and has a second width that is less than the width of the deep P-well. An M-type guard ring is formed around the upper surface of the second doped well, A Schottky metal is disposed on an upper surface of the second doped well and the N-type guard ring.

REFERENCES:
patent: 4874714 (1989-10-01), Eklund
patent: 6583485 (2003-06-01), Epke
patent: 6653707 (2003-11-01), Sawdai et al.
patent: 6885077 (2005-04-01), Dietl et al.
patent: 7071518 (2006-07-01), Parthasarathy et al.
patent: 7279390 (2007-10-01), Duskin et al.
patent: 2008/0135970 (2008-06-01), Kim et al.

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