Semiconductor device manufacturing: process – Making device or circuit emissive of nonelectrical signal – Compound semiconductor
Reexamination Certificate
2006-10-24
2006-10-24
Malsawma, Lex H. (Department: 2823)
Semiconductor device manufacturing: process
Making device or circuit emissive of nonelectrical signal
Compound semiconductor
Reexamination Certificate
active
07125737
ABSTRACT:
A physically robust light emitting diode is disclosed that offers high-reliability in standard packaging and that will withstand high temperature and high humidity conditions. The diode comprises a Group III nitride heterojunction diode with a p-type Group III nitride contact layer, an ohmic contact to the p-type contact layer, and a sputter-deposited silicon nitride composition passivation layer on the ohmic contact. A method of manufacturing a light emitting diode and an LED lamp incorporating the diode are also disclosed.
REFERENCES:
patent: 4860069 (1989-08-01), Yamazaki
patent: 4894703 (1990-01-01), Hamamsy et al.
patent: 5077587 (1991-12-01), Albergo et al.
patent: 5113233 (1992-05-01), Kitagawa et al.
patent: 5214306 (1993-05-01), Hashimoto
patent: RE34861 (1995-02-01), Davis et al.
patent: 5393993 (1995-02-01), Edmond et al.
patent: 5404282 (1995-04-01), Klinke et al.
patent: 5416342 (1995-05-01), Edmond et al.
patent: 5523589 (1996-06-01), Edmond et al.
patent: 5550091 (1996-08-01), Fukuda et al.
patent: 5567523 (1996-10-01), Rosenblum et al.
patent: 5583351 (1996-12-01), Brown et al.
patent: 5585648 (1996-12-01), Tischler
patent: 5592501 (1997-01-01), Edmond et al.
patent: 5616937 (1997-04-01), Kitagawa et al.
patent: 5652434 (1997-07-01), Nakamura et al.
patent: 5708280 (1998-01-01), Lebby et al.
patent: 5739554 (1998-04-01), Edmond et al.
patent: 5767581 (1998-06-01), Nakamura et al.
patent: 5798537 (1998-08-01), Nitta
patent: 5813752 (1998-09-01), Singer et al.
patent: 5877558 (1999-03-01), Nakamura et al.
patent: 5959401 (1999-09-01), Asami et al.
patent: 6258617 (2001-07-01), Nitta et al.
patent: 6524971 (2003-02-01), Fetter et al.
patent: 2001/0023964 (2001-09-01), Wu et al.
patent: 0357458 (1990-03-01), None
patent: 0404565 (1990-12-01), None
patent: 0622858 (1994-11-01), None
patent: 1052705 (2000-11-01), None
patent: 1278249 (2003-01-01), None
patent: WO 96/24167 (1996-08-01), None
patent: WO 99/10936 (1999-03-01), None
Ishikawa, Hidenori, et al.; “Effects of Surface Treatments and Metal Work Functions on Electrical Properties at p-GaN/Metal Interfaces,” J.Appl.Phys., vol. 81, No. 3, Feb. 1, 1997, pp. 1315-1322.
Edmond John Adam
Mieczkowski Van Allen
Negley Gerald H.
Slater, Jr. David Beardsley
Thibeault Brian
Cree Inc.
Malsawma Lex H.
Summa, Allan & Additon, P.A.
LandOfFree
Robust Group III light emitting diode for high reliability... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Robust Group III light emitting diode for high reliability..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Robust Group III light emitting diode for high reliability... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3620618