Active solid-state devices (e.g. – transistors – solid-state diode – Thin active physical layer which is – Low workfunction layer for electron emission
Reexamination Certificate
2002-12-12
2004-06-15
Nelms, David (Department: 2818)
Active solid-state devices (e.g., transistors, solid-state diode
Thin active physical layer which is
Low workfunction layer for electron emission
C257S011000, C257S173000, C257S355000, C257S529000, C257S546000, C438S020000, C438S022000, C438S048000
Reexamination Certificate
active
06750470
ABSTRACT:
BACKGROUND OF THE INVENTION
This invention is related generally to field emitter arrays.
Field emitter arrays (FEAs) generally include an array of field emitter devices. Each emitter device, when properly driven, can emit electrons from the tip of the device. Field emitter arrays have many applications, one of which is in field emitter displays (FEDs), which can be implemented as a flat panel display. In addition to flat panel displays, FEAs have applications as electron sources in microwave tubes, X-ray tubes, and other microelectronic devices.
FIG. 1
illustrates a portion of a conventional FEA. The field emitter device shown in
FIG. 1
is often referred to as a “Spindt-type” FEA. It includes a field emitter tip
12
formed on a semiconductor substrate
10
. Refractory metal, carbide, diamond and silicon tips, silicon carbon nanotubes and metallic nanowires are some of the structures known to be used as field emitter tips
12
. The field emitter tip
12
is adjacent to an insulating layer
14
and a conducting gate layer
16
. By applying an appropriate voltage to the conducting gate layer
16
, the current to the field emitter tip
12
passing through semiconductor substrate
10
is controlled.
FEAs in many prior art designs are susceptible to failure due to gate-to-substrate short circuiting and gate to tip arcing. Typically, failure occurs from (i) an overvoltage on the gate and bulk breakdown of the insulating layer
14
that allows current to punch through or flash over the insulating layer
14
of the gate and creates a high current arc that destroys the entire device or (ii) an overvoltage on the gate that causes an arc to develop between the grid and tip.
A large number of field emitter tips are typically supplied current by a single conducting gate layer. Thus, when short circuit failure occurs, all the emitter tips corresponding to a particular gate layer are affected, and failure is catastrophic.
SUMMARY OF THE INVENTION
In accordance with one aspect of the present invention, there is provided a field emitter device disposed over a semiconductor substrate. The field emitter device comprises: at least one field emitter tip disposed over the substrate; a conducting gate electrode layer disposed over the substrate; a protective electronic component disposed over and integral to the substrate and electrically connecting the conducting gate electrode layer to the substrate such that if the conducting gate electrode layer experiences a voltage greater than a breakdown voltage of the field emitter device, the protective electronic component conducts current between the conducting gate electrode layer and the substrate.
In accordance with another aspect of the present invention, there is provided a method of forming a field emitter device formed over a semiconductor substrate. The method comprises: forming at least one field emitter tip over the substrate; forming a conducting gate electrode layer over the substrate; forming a protective electronic component over and integral to the substrate and electrically connecting the conducting gate electrode layer to the substrate such that if the conducting gate electrode layer experiences a voltage greater than a breakdown voltage of the field emitter device, the protective electronic component conducts current between the conducting gate electrode layer and the substrate.
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Foley & Lardner LLP
General Electric Company
Huynh Andy
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