Robust ESD cell

Details Robust ESD cell Robust ESD cell

2007-04-09

2010-02-02

Ngo, Ngan (Department: 2893)

Active solid-state devices (e.g., transistors, solid-state diode

Integrated circuit structure with electrically isolated...

Passive components in ics

C257S572000, C257S358000, C257S360000, C257S361000, C257S362000, C257S363000, C257SE27019

Reexamination Certificate

active

07656009

ABSTRACT:
An electric discharge device includes a bipolar transistor configuration comprising a base, an emitter, and a collector. At least one pinched resistor is formed in a region comprising both the base and emitter so as to produce a pinched resistive area that develops a voltage once the bipolar transistor experiences junction breakdown.

REFERENCES:
patent: 4659979 (1987-04-01), Burnham et al.
patent: 5212618 (1993-05-01), O'Neill et al.
patent: 6777784 (2004-08-01), Vashchenko et al.
patent: 2206353 (1972-10-01), None
patent: 58199563 (1983-11-01), None
patent: 2005235844 (2005-09-01), None

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