Active solid-state devices (e.g. – transistors – solid-state diode – Encapsulated – With specified filler material
Reexamination Certificate
2005-05-17
2005-05-17
Nguyen, Cuong (Department: 2811)
Active solid-state devices (e.g., transistors, solid-state diode
Encapsulated
With specified filler material
C257S789000, C257S687000, C257S678000
Reexamination Certificate
active
06894400
ABSTRACT:
Packages for electronic devices are formed from a die such as a silicon die in electrical communication with a substrate through a mating array, e.g. ball array, on the substrate. An underfill material is present between the die and substrate in the region of the array. For large dies (a dimension of 15 mm or greater) failure of the connection between the die and substrate is avoided by employing a particle filled underfill material with specifically chosen Young moduli both below and above the glass transition temperature of the underfill material.
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Goodelle Jason P.
Osenbach John W.
Agere Systems Inc.
Nguyen Cuong
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