Rinsing solution after resist stripping process and method for m

Details Rinsing solution after resist stripping process and method for m Rinsing solution after resist stripping process and method for m

1996-12-27

1999-03-23

Dang, Thi

Semiconductor device manufacturing: process

Chemical etching

Vapor phase etching

438754, 438906, 438745, C09K 1300, H01L 2100

Patent

active

058859012

ABSTRACT:
After the resist is removed with an alkaline solution, a noncorrosive rinse solution is applied to the substrate which is composed of (a) a water-soluble monovalent lower alcohol and an organic or inorganic acid, or (b) a water-soluble monovalent lower alcohol, an organic or inorganic acid and water or (c) an organic or inorganic acid. This rinse solution prevents corrosion completely when a resist is removed from Al-Si-Cu wiring :material, which is widely used as the wiring material for high-density integrated circuits.

REFERENCES:
patent: 4087370 (1978-05-01), Singalewitch et al.
patent: 4604144 (1986-08-01), Wong
patent: 4746397 (1988-05-01), Maeda et al.
patent: 5007981 (1991-04-01), Kawasaki et al.
patent: 5248384 (1993-09-01), Liu et al.
patent: 5308745 (1994-05-01), Schwartzkopf
patent: 5376235 (1994-12-01), Langley

Affiliated with

Also associated with

Rating

Rinsing solution after resist stripping process and method for m does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Rinsing solution after resist stripping process and method for m, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Rinsing solution after resist stripping process and method for m will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2125052