Radiation imagery chemistry: process – composition – or product th – Post imaging processing
Reexamination Certificate
2011-06-28
2011-06-28
Kelly, Cynthia H (Department: 1722)
Radiation imagery chemistry: process, composition, or product th
Post imaging processing
C430S331000, C430S427000, C430S434000
Reexamination Certificate
active
07968278
ABSTRACT:
A rinsing method for performing a rinsing process on a substrate, after a developing process is performed on a light-exposed pattern disposed thereon, includes a step (STEP5) of throwing off a developing solution from the substrate after development; a step (STEP6) of supplying a water-based cleaning liquid onto the substrate; a step (STEP7) of supplying a surfactant-containing rinsing liquid onto the substrate to replace liquid remaining on the substrate with the surfactant-containing rinsing liquid; and a step (STEP8) of rotating the substrate to expand and throw off the surfactant-containing rinsing liquid on the substrate. STEP8is arranged to supply the surfactant-containing rinsing liquid for a supply time of 5 seconds or less. STEP9is arranged to include a first period with a lower rotation number and a second period with a higher rotation number, and to set the rotation number of the substrate in the first period to be more than 300 rpm and less than 1,000 rpm.
REFERENCES:
patent: 6159662 (2000-12-01), Chen et al.
patent: 6352818 (2002-03-01), Hsieh
patent: 2005/0223980 (2005-10-01), Awamura et al.
patent: 2006/0124586 (2006-06-01), Kobayashi et al.
patent: 07 142349 (1995-06-01), None
patent: 2001 005191 (2001-01-01), None
patent: 2003 178942 (2003-06-01), None
patent: 2003 178943 (2003-06-01), None
patent: 2003 178944 (2003-06-01), None
patent: 2003 178946 (2003-06-01), None
patent: 2004 014844 (2004-01-01), None
patent: 2004-22764 (2004-01-01), None
patent: WO 03/105201 (2003-12-01), None
patent: WO 2004/051379 (2004-06-01), None
Miyahara Osamu
Takaki Yasuhiro
Tanaka Keiichi
Terada Takashi
Wakamizu Shinya
Eoff Anca
Kelly Cynthia H
Oblon, Spivak McClelland, Maier & Neustadt, L.L.P.
Tokyo Electron Limited
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