Active solid-state devices (e.g. – transistors – solid-state diode – Bulk effect device – Bulk effect switching in amorphous material
Reexamination Certificate
2011-01-04
2011-01-04
Pham, Thanh V (Department: 2894)
Active solid-state devices (e.g., transistors, solid-state diode
Bulk effect device
Bulk effect switching in amorphous material
C257S004000, C257S005000, C438S409000
Reexamination Certificate
active
07863596
ABSTRACT:
A ring shaped heater surrounds a chalcogenide region along the length of a cylindrical solid phase portion thereof defining a change phase memory element. The chalcogenide region is formed in a sub-lithographic pore, so that a relatively compact structure is achieved. Furthermore, the ring contact between the heater and the cylindrical solid phase portion results in a more gradual transition of resistance versus programming current, enabling multilevel memories to be formed.
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Karpov Ilya V.
Kostylev Sergey
Kuo Charles C.
Iannucci Robert
Jorgenson Lisa K.
Pham Thanh V
Seed IP Law Group PLLC
STMicroelectronics S.r.l.
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