Ring crystallization of wafers to prevent thermal shock

Details Ring crystallization of wafers to prevent thermal shock Ring crystallization of wafers to prevent thermal shock

1990-12-31

1992-09-22

Chaudhuri, Olik

Fishing, trapping, and vermin destroying

437174, 437939, C30B 3300

Patent

active

051496755

ABSTRACT:
A ring of polycrystalline material is developed around the edge of a wafer by general heating of the wafer and localized heating with a laser beam followed by rapid cooling. The ring of polycrystalline material helps prevent wafer breakage due to thermal shock. One or more additonal ring, loop or closed figures of polycrystalline material can be formed inside of said ring of polycrystalline material developed around the edge of the wafer to further reinforce the wafer.

REFERENCES:
patent: 4751193 (1988-06-01), Myrick
Wolf et al., Silicon Processing for the VLSI ERA p. 56-58 (Lattice Press. 1986).

Affiliated with

Also associated with

Rating

Ring crystallization of wafers to prevent thermal shock does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Ring crystallization of wafers to prevent thermal shock, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Ring crystallization of wafers to prevent thermal shock will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1068230