RIE process for fabricating submicron, silicon electromechanical

Details RIE process for fabricating submicron, silicon electromechanical RIE process for fabricating submicron, silicon electromechanical

1993-03-29

1994-05-31

Powell, William

Fishing, trapping, and vermin destroying

437225, 437228, 148DIG50, 148DIG51, H01L 2144, H01L 2148, H01L 2190

Patent

active

053169794

ABSTRACT:
A reactive ion etching process is used for the fabrication of submicron, single crystal silicon, movable mechanical structures and capacitive actuators. The reactive ion etching process gives excellent control of lateral dimensions while maintaining a large vertical depth in the formation of high aspect-ratio freely suspended single crystal silicon structures. The silicon etch process is independent of crystal orientation and produces controllable vertical profiles.

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