Ridge waveguide semiconductor laser with thin active region

Details Ridge waveguide semiconductor laser with thin active region Ridge waveguide semiconductor laser with thin active region

1992-11-05

1994-05-03

Healy, Brian

Coherent light generators

Particular active media

Semiconductor

372 45, 372 48, 372 50, H01S 318

Patent

active

053094654

ABSTRACT:
The present invention provides an improved semiconductor ridge waveguide laser structure having a plurality of layers including an N-InP buffer layer and an N-type InP substrate, a thin InGaAsP active layer 1100 Angstroms thickness, a P-InP graded layer, an optional etch stop layer, a P-InP cladding layer and a P+InGaAs. The ridge waveguide laser of the present invention demonstrates a very high reliability and the fabrication process therefor is high yield. The ridge waveguide laser of the present invention demonstrates very good high temperature behavior and the design suppresses higher order modes.

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