Coherent light generators – Particular active media – Semiconductor
Reexamination Certificate
2006-07-04
2006-07-04
Rodriguez, Armando (Department: 2828)
Coherent light generators
Particular active media
Semiconductor
C372S043010
Reexamination Certificate
active
07072374
ABSTRACT:
A ridge waveguide semiconductor laser diode is disclosed that comprises an n-type semiconductor layer, a p-type semiconductor layer having a ridge forming a waveguide and an active layer disposed between the n-type semiconductor layer and the p-type semiconductor layer. The laser diode also includes a first protective insulating layer partially covering the ridge so as to expose at least a portion of a top face of the ridge, a p-side ohmic electrode in ohmic contact with the portion of the ridge, a p-side pad electrode disposed so as to electrically connect to the p-side ohmic electrode; and an intermediate layer is disposed between the p-side ohmic electrode and the p-side pad electrode so as to cover a portion of the p-side ohmic electrode including an area that covers the top face of the ridge. The intermediate layer can be a diffusion prevention layer for preventing diffusion of a low melting point. The laser diode can also include a second protective insulating layer disposed on a portion of the first protective insulating layer. When the second protective insulating layer is used, the intermediate layer and the second protective insulating layer may have the same composition.
REFERENCES:
patent: 4424527 (1984-01-01), Rao et al.
patent: 5429680 (1995-07-01), Fuschetti
patent: 5436466 (1995-07-01), Ko et al.
patent: 6067309 (2000-05-01), Onomura et al.
patent: 6838701 (2005-01-01), Sano
patent: 2002/0034204 (2002-03-01), Iwamoto et al.
patent: 2004/0108804 (2004-06-01), Hsu
patent: 2004/0124500 (2004-07-01), Kawagoe
patent: 2004/0124550 (2004-07-01), Kawagoe
patent: 2004/0161010 (2004-08-01), Matsumura
patent: 0 714 126 (1996-05-01), None
patent: 03145178 (1991-06-01), None
patent: 2000-58965 (2000-02-01), None
patent: WO 01/61804 (2001-08-01), None
patent: WO 02/084831 (2002-10-01), None
Sugiyama, K. “Deterioration Mechanisms in Metallization of Si Devices” Sanken Technical Report, 1995, pp. 19-27, vol. 27, No. 1, Sanken Electric Co., Ltd., Japan.
Gocke, O. H. et al. “Effects of Annealing on X-Ray-Amorphous CVD W-Si-N Barrier Layer Materials” Thin Solid Films, Sep. 1999, pp. 149-156, vol. 353, Nos. 1-2, Elsevier Science S. A., Lausanne, CH.
Nguyen Dung
Nichia Corporation
Rodriguez Armando
Smith Patent Office
LandOfFree
Ridge waveguide semiconductor laser diode does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Ridge waveguide semiconductor laser diode, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Ridge waveguide semiconductor laser diode will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3543670