Ridge waveguide semiconductor laser

Details Ridge waveguide semiconductor laser Ridge waveguide semiconductor laser

2007-03-06

2007-03-06

Harvey, Minsun Oh (Department: 2828)

Coherent light generators

Particular active media

Semiconductor

C372S045010, C257S079000

Reexamination Certificate

active

10799714

ABSTRACT:
A ridge waveguide semiconductor laser includes an active layer, semiconductor layers on the active layer and having a ridge-shaped waveguide, an insulating film on the semiconductor layer, a first electrode layer in contact with the semiconductor layer through an opening in the insulating film, and a second electrode layer on the first electrode layer having a stripe shape and extending along the waveguide. A distance from an end face of a resonator of the laser to an edge of the second electrode layer does not exceed 20 μm.

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“Effect of Au thickness on laser beam penetration in Invar-to-Invar packages” Wang, S.C.; Chang, H.L.; Wang, C.; Wang, C.M.; Liaw, J.W.; Sheen, M.T.; Sheu, Y.C.; Kuang, J.H.; Chi, S.; Yang, Y.D.; Cheng, W.H.; Electronic Components and Technology Conference, 1997. Proceedings., 47th; May 18-21, 1997 pp. 1272-1276.
“Effect of Au thickness on laser beam penetration in Invar-to-Invar Packages” Wang, S.C.; Chang, H.L.; Wang, C.; Wang, C.M.; Liaw, J.W.; Sheen, M.T.; Sheu, Y.C.; Kuang, J.H.; Chi, S.; Yang, Y.D.; Cheng, W.H.; Electronic Components and Technology Conference, 1997. Proceedings., 47th; May 18-21, 1997 pp. 1272-1276.

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