Ridge-waveguide semiconductor laser

Details Ridge-waveguide semiconductor laser Ridge-waveguide semiconductor laser

1990-02-22

1991-08-20

Epps, Georgia

Coherent light generators

Particular active media

Semiconductor

372 45, 357 17, H01S 319

Patent

active

050420453

ABSTRACT:
A semiconductor laser includes a substrate (11) on which there are successively formed a first cladding layer (12), an active layer (13), a second cladding layer (14), an etching-stop layer (15) exhibiting little absorptivity with respect to light emitting by the active layer, and a third cladding layer (16). The third cladding layer is etched away down to the etching stop layer with the exception of a ridge portion of the third cladding layer.

REFERENCES:
patent: 4694460 (1987-09-01), Hayakawa et al.
patent: 4899349 (1990-02-01), Hayakawa et al.

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