Ridge waveguide device surface passivation by epitaxial...

Active solid-state devices (e.g. – transistors – solid-state diode – Thin active physical layer which is – Heterojunction

Reexamination Certificate

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C438S031000, C438S016000, C438S029000, C438S518000

Reexamination Certificate

active

07378681

ABSTRACT:
A method for reducing surface recombination in an area next to a mesa in devices containing active and passive sections. This is obtained by growing, by metalorganic vapor phase epitaxy (MOVPE), a thin epitaxial layer of material with larger bandgap than a waveguide material and preferably smaller surface recombination rate than the waveguide material. This thin layer is preferably non-intentionally doped to avoid creating a surface leakage path, thin enough to allow for carrier to diffuse to and thermalize in the waveguide layer and thick enough to prevent carriers to tunnel through it.

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