Active solid-state devices (e.g. – transistors – solid-state diode – Thin active physical layer which is – Heterojunction
Reexamination Certificate
2008-05-27
2008-05-27
Luu, Chuong A. (Department: 2892)
Active solid-state devices (e.g., transistors, solid-state diode
Thin active physical layer which is
Heterojunction
C438S031000, C438S016000, C438S029000, C438S518000
Reexamination Certificate
active
07378681
ABSTRACT:
A method for reducing surface recombination in an area next to a mesa in devices containing active and passive sections. This is obtained by growing, by metalorganic vapor phase epitaxy (MOVPE), a thin epitaxial layer of material with larger bandgap than a waveguide material and preferably smaller surface recombination rate than the waveguide material. This thin layer is preferably non-intentionally doped to avoid creating a surface leakage path, thin enough to allow for carrier to diffuse to and thermalize in the waveguide layer and thick enough to prevent carriers to tunnel through it.
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Agility Communications, Inc.
Allen, Dyer, Doppelt, Milbrath & Gilchirst, P.A.
Luu Chuong A.
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