Etching a substrate: processes – Gas phase etching of substrate – Etching inorganic substrate
Reexamination Certificate
2008-09-29
2011-12-06
Vinh, Lan (Department: 1713)
Etching a substrate: processes
Gas phase etching of substrate
Etching inorganic substrate
C216S097000, C216S100000, C438S723000
Reexamination Certificate
active
08070973
ABSTRACT:
Apparatus including: a substrate layer having a substantially planar top surface; an optically conductive peak located and elongated on, and spanning a first thickness measured in a direction generally away from, the top surface; the optically conductive peak having first and second lateral walls each including distal and proximal lateral wall portions, the proximal lateral wall portions intersecting the top surface; and first and second sidewall layers located on the distal lateral wall portions, the sidewall layers not intersecting the top surface and spanning a second thickness that is less than the first thickness measured in the same direction.
REFERENCES:
patent: 5268315 (1993-12-01), Prasad et al.
patent: 5416044 (1995-05-01), Chino et al.
patent: 6487354 (2002-11-01), Ferm et al.
patent: 2005/0068887 (2005-03-01), Chen et al.
patent: 2005/0135765 (2005-06-01), Nakata et al.
Chen Young-Kai
Leven Andreas Bertold
Yang Yang
Alcatel Lucent
Brown Jay M.
Vinh Lan
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