Rib waveguide type semiconductor laser

Details Rib waveguide type semiconductor laser Rib waveguide type semiconductor laser

1989-07-24

1990-09-25

Sikes, William L.

Coherent light generators

Particular active media

Semiconductor

372 45, 357 16, 357 17, H01S 319

Patent

active

049598392

ABSTRACT:
A rib waveguide type semiconductor laser including p-type high impurity concentration layer formed between a p-upper cladding layer and p-ohmic layer and having an impurity concentration higher than the impurity concentration of the p-upper cladding layer and p-ohmic layer. The high impurity concentration layer acts to make small a discontinous portion of the valence band between the p-upper cladding layer and p-ohmic layer and change the steep junction to a smoothly inclined junction, thereby lowering the voltage drop across the junction.

REFERENCES:
patent: 4792958 (1988-12-01), Ohba et al.
patent: 4845724 (1989-07-01), Hayakawa et al.

Affiliated with

Also associated with

Rating

Rib waveguide type semiconductor laser does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Rib waveguide type semiconductor laser, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Rib waveguide type semiconductor laser will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-333494