RFID tag with redundant non-volatile memory cell

Details RFID tag with redundant non-volatile memory cell RFID tag with redundant non-volatile memory cell

2008-01-26

2010-10-05

Yoha, Connie C (Department: 2827)

Static information storage and retrieval

Floating gate

Particular connection

C365S185250, C365S185210, C365S185280

Reexamination Certificate

active

07808823

ABSTRACT:
Two floating gate devices are arranged in a redundant configuration in a non-volatile memory (NVM) of a Radio Frequency Identification (RFID) tag such that stress induced leakage current (SILC) or other failures do not result in a complete loss of memory storage. The redundant NVM may be arranged as a series configuration, a parallel configuration, a single-ended device, a differential device, a simple logic circuit function, and/or a complex logic circuit function.

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