RF/VHF plasma diamond growth method and apparatus and materials

Details RF/VHF plasma diamond growth method and apparatus and materials RF/VHF plasma diamond growth method and apparatus and materials

1997-10-30

1999-05-11

Hiteshew, Felisa

Chemistry of inorganic compounds

Carbon or compound thereof

Elemental carbon

117 79, 117929, 4272553, B01J03/06

Patent

active

059025638

ABSTRACT:
Processes are disclosed for performing non-microwave, non-arcjet plasma-assisted chemical vapor deposition of diamond in which substantially no particles impact the growing diamond surface with energies sufficient to prevent the growth of diamond. The energies of the particles are limited by selecting frequency, pressure, magnetic fields, electrical bias, or a combination thereof to the deposition region of the chamber. Diamond materials formed by these processes are also disclosed.

REFERENCES:
patent: 4434188 (1984-02-01), Kamo et al.
patent: 5230740 (1993-07-01), Pinneo
patent: 5324553 (1994-06-01), Ovshinsky et al.

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