Patent
1989-10-31
1992-04-14
LaRoche, Eugene R.
357 69, 357 70, 357 81, H01L 2302
Patent
active
051052601
ABSTRACT:
An improved transistor package with superior stability to wave soldering, having a nickel oxide barrier strip formed on the surface of the leads.
REFERENCES:
patent: 3364400 (1968-01-01), Granberry
patent: 3489956 (1970-01-01), Yanai et al.
patent: 3500066 (1970-03-01), Pritchett
patent: 3626259 (1971-12-01), Torrance et al.
patent: 3651434 (1972-03-01), McGeough et al.
patent: 3753056 (1973-08-01), Cooke
patent: 3801882 (1974-04-01), Ward
patent: 3908185 (1975-09-01), Martin
patent: 3936864 (1976-02-01), Benjamin
patent: 3996603 (1976-12-01), Smith
patent: 3999142 (1976-12-01), Presser et al.
patent: 4161740 (1979-07-01), Frey
patent: 4168507 (1979-09-01), Yester
patent: 4261764 (1981-04-01), Narayan
patent: 4517587 (1985-05-01), Matsushita
patent: 4639760 (1987-01-01), Granberg et al.
patent: 4649416 (1987-03-01), Borkowski et al.
patent: 4788627 (1988-11-01), Ehlert
patent: 4876588 (1989-10-01), Miyamoto
Casey Kevin R.
LaRoche Eugene R.
Ratliff R.
Robinson Richard K.
SGS-Thomson Microelectronics Inc.
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