RF switching circuit for use in mobile communication systems

Details RF switching circuit for use in mobile communication systems RF switching circuit for use in mobile communication systems

2007-01-09

2007-01-09

Dickey, Thomas L. (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Junction field effect transistor

C257SE29319

Reexamination Certificate

active

11134333

ABSTRACT:
An RF switching circuit according to the present invention includes: a plurality of input/output terminals for inputting and outputting an RF signal; and a switch for opening and closing an electrical connection between the input/output terminals. The switch is constituted by a multi-gate field effect transistor including a plurality of gates located between source and drain spaced from each other on a semiconductor layer. A bias voltage is applied to an inter-gate region of the semiconductor layer between the gates. The bias voltage is equal to or lower than 90% of a high-level voltage, which is a voltage for turning the multi-gate field effect transistor ON, in a state where the multi-gate field effect transistor is ON, and is equal to or higher than 80% of the high-level voltage and equal to or lower than the high-level voltage in a state where the multi-gate field effect transistor is OFF.

REFERENCES:
patent: 2004/0026742 (2004-02-01), Nakatsuka et al.
patent: 2000-183362 (2000-06-01), None

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