RF Sputtering for preparing substantially pure amorphous silicon

Details RF Sputtering for preparing substantially pure amorphous silicon RF Sputtering for preparing substantially pure amorphous silicon

1980-08-26

1982-10-12

Cooper, Jack

Chemistry: electrical and wave energy

Processes and products

Vacuum arc discharge coating

423347, C23C 1500

Patent

active

043537880

ABSTRACT:
A process for controlling the dihydride and monohydride bond densities in hydrogenated amorphous silicon produced by reactive rf sputtering of an amorphous silicon target. There is provided a chamber with an amorphous silicon target and a substrate therein with the substrate and the target positioned such that when rf power is applied to the target the substrate is in contact with the sputtering plasma produced thereby. Hydrogen and argon are fed to the chamber and the pressure is reduced in the chamber to a value sufficient to maintain a sputtering plasma therein, and then rf power is applied to the silicon target to provide a power density in the range of from about 7 watts per square inch to about 22 watts per square inch to sputter an amorphous silicon hydride onto the substrate, the dihydride bond density decreasing with an increase in the rf power density. Substantially pure monohydride films may be produced.

REFERENCES:
patent: 4252865 (1981-02-01), Gilbert et al.
Brodsky, "Thin Solid Films", 50, (1978), pp. 57-67.
Thompson et al., "Proced. Int'l Photovoltaic Solar Energy Conf.", 8/78, pp. 231-240.
Anderson et al., "J. Vac. Sci. Technol.", 16(3), 6/79, pp. 906-912.
Jeffrey et al., "J. Appl. Phys.", 50(11), 11/79, pp. 7034-7038.
Jeffrey et al., "8th International Conf. on Amorphous Liquid Semicond.", 8/27/79.
Stein et al., "Applied Physics Letters", 34(9), 1979, p. 604.

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