RF shielded device

Semiconductor device manufacturing: process – Packaging or treatment of packaged semiconductor – Making plural separate devices

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Details

438 33, 438112, 438124, 438126, 438127, H01L 2144

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active

06150193&

ABSTRACT:
A shielded package for an IC chip having bond pads thereon includes an insulating substrate having metallizations formed on a surface of the substrate. The IC chip is mounted to the substrate surface and the IC chip bonding pads are electrically coupled to corresponding substrate metallizations. An insulating encapsulant layer encapsulates the IC chip and the substrate surface. A conductive shield layer comprising a cured flowable electrically conductive material is formed above the encapsulant layer.
The encapsulant layer electrically isolates the shield layer from the IC chip and the various electrical conductors (e.g. bonding pads, bond wires, contacts and metallizations). The shield layer, being an electrically conductive material, forms a floating ground plane which shields the IC chip and the remainder of the package. Thus, the shield layer prevents external radiation form interfering with the operation of the package and also prevents the package from emitting radiation which could interfere with other electronic components and devices.

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