RF semiconductor device and a method for manufacturing the same

Details RF semiconductor device and a method for manufacturing the same RF semiconductor device and a method for manufacturing the same

1996-10-28

1999-02-16

Brown, Peter Toby

Active solid-state devices (e.g., transistors, solid-state diode

Transmission line lead

257701, 257702, H01L 2940

Patent

active

058723935

ABSTRACT:
In fabricating an MFIC by mounting a semiconductor chip on a substrate having a microstrip line by MBB bonding, a benzocyclobutene (BCB) film is used as a dielectric film of the microstrip line. By providing a means for preventing the deformation, peeling, and cracking of the BCB film during the fabrication process, the thickness of the dielectric film is held substantially equal even after flip-chip mounting, which reduces impedance fluctuations.

REFERENCES:
patent: 5717251 (1998-02-01), Hayashi et al.
H. Sakai et al., "A Novel Millimeter-Wave IC and Si Substrate Using Flip-Chip Bonding Technology", 1994 IEEE MTT-S Digest, pp. 1763-1766.
H. Sakai et al., "A Novel Millimeter-Wave IC on Si Substrate Using Flip-Chip Bonding Technology", IEICE Transactions on Electronics, vol. E78-C, No. 8, pp. 971-978 (Aug. 1995).

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