RF pulse modulated amplifier having conduction angle control

Amplifiers – With semiconductor amplifying device – Including particular biasing arrangement

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330130, 330298, 332 9T, 375 71, 375 73, H03F 319, G01S 956

Patent

active

046442936

ABSTRACT:
A pulse modulated amplifier is described comprising a power transistor having a grounded base, an emitter for receiving a drive signal to be amplified, and a collector for emitting a high frequency pulse, the power transistor operating over a substantially 360.degree. conduction angle variation during which the drive signal is amplified. The pulse modulated amplifier preferably includes a pulse modulator for generating a modulation drive voltage, and a current driver circuit responsive to the modulation drive voltage for generating a control current. The control current is applied to the emitter of the power transistor to control the output power of the emitted high frequency pulse. For a given drive signal the conduction angle of the power transistor is proportional to the control current, and for a given control current the conduction angle of the power transistor is inversely proportional to the drive signal. Accordingly, the instantaneous conduction angle of the power transistor varies throughout the generation of the high frequency pulse such that the pulse amplifier transitions from Class A through Class AB to Class C operation.

REFERENCES:
patent: 3667049 (1972-05-01), Ostroff et al.
patent: 4107630 (1978-08-01), Schucht
patent: 4117411 (1978-09-01), Goble
patent: 4302792 (1981-11-01), Harwood
patent: 4322689 (1982-03-01), Schucht
patent: 4379996 (1983-04-01), Weber
patent: 4417358 (1983-02-01), Zeis

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