RF pre-amplifiers and power amplifiers

Details RF pre-amplifiers and power amplifiers RF pre-amplifiers and power amplifiers

2011-05-17

2011-05-17

Nguyen, Hieu P (Department: 2817)

Amplifiers

With semiconductor amplifying device

Including field effect transistor

C330S305000

Reexamination Certificate

active

07944305

ABSTRACT:
An RF amplifier circuit includes a MOSFET connected to an RF output of the circuit via an impedance matching network including an inductor and a tuning capacitor connected in parallel with the inductor and the MOSFET. DC voltage is applied to the MOSFET via a series path through a radio frequency choke and the inductor of the impedance matching network.

REFERENCES:
patent: 4443877 (1984-04-01), Chenausky et al.
patent: 5150372 (1992-09-01), Nourrcier
patent: 6181719 (2001-01-01), Sukhman et al.
patent: 7161434 (2007-01-01), Rhodes
patent: 7265619 (2007-09-01), Tayrani
patent: 2008/0204134 (2008-08-01), Knickerbocker et al.
U.S. Appl. No. 12/416,908, filed Apr. 1, 2009, by W. Shef Robotham, Jr. et al., entitled “Frequency-Agile RF-Power Excitation for Driving Diffusion-Cooled Sealed-Off, RF-Excited Gas Lasers”.

Affiliated with

Also associated with

Rating

RF pre-amplifiers and power amplifiers does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with RF pre-amplifiers and power amplifiers, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and RF pre-amplifiers and power amplifiers will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2640488