RF power transistor package

Details RF power transistor package RF power transistor package

2005-09-21

2009-08-04

Kebede, Brook (Department: 2894)

Active solid-state devices (e.g., transistors, solid-state diode

Housing or package

Insulating material

C257SE21499

Reexamination Certificate

active

07569927

ABSTRACT:
An RF power transistor package with a rectangular ceramic base can house one or more dies affixed to an upper surface of the ceramic base. Source leads attached to the ceramic base extend from at least opposite sides of the rectangular base beneath a periphery of a non-conductive cover overlying the ceramic base. The cover includes recesses arranged to receive the one or more die, the ceramic base, gate and drain leads and a portion of the source leads. The cover further includes bolt holes arranged to clamp the ceramic base and source leads to a heat sink. Bosses at corners of the cover outward of the bolt holes exert a downward bowing force along the periphery of the cover between the bolt holes.

REFERENCES:
patent: 4639760 (1987-01-01), Granberg et al.
patent: 4781612 (1988-11-01), Thrush
patent: 4845545 (1989-07-01), Abramowitz et al.
patent: 5798744 (1998-08-01), Tanaka et al.
patent: 5850104 (1998-12-01), Avis
patent: 6130821 (2000-10-01), Gerber
patent: 6181006 (2001-01-01), Ahl et al.
patent: 6392298 (2002-05-01), Leighton et al.
patent: 6566749 (2003-05-01), Joshi et al.
patent: 6656754 (2003-12-01), Farnworth et al.
patent: 6731002 (2004-05-01), Choi
patent: 6833566 (2004-12-01), Suehiro et al.
patent: 6849942 (2005-02-01), Lin et al.
patent: 6890845 (2005-05-01), Standing et al.
patent: 7067392 (2006-06-01), Yamazaki et al.
patent: 2004/0135247 (2004-07-01), Takashima et al.
patent: 2006/0087026 (2006-04-01), Cao et al.
patent: 2006/0279934 (2006-12-01), Schlomann
patent: 2007/0235866 (2007-10-01), Schlomann
patent: 99/21225 (1999-04-01), None
Advanced Power Technology, “RF Power Mosfet, ARF1500”, Rev. Feb. 2005, Product Technical Data (3 pages).
Power Compact S.A., “Power Hybrid Modules Data Book 1992,” pp. L 14-L17, B1-B2; C2.
Advanced Power Technology Europe, Power Compact Modules, Application Specific Power Modules ASPM, Product Catalog, Jun. 1994, Merignac, France, pp. 3-15.

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