RF power transistor package

Details RF power transistor package RF power transistor package

1993-03-17

1994-08-16

Wojciechowicz, Edward

Active solid-state devices (e.g., transistors, solid-state diode

Housing or package

With contact or lead

257692, 257698, 257705, 257773, 257786, 257666, H01L 2348

Patent

active

053389743

ABSTRACT:
An RF power transistor is mounted on a ceramic substrate with a plurality of input leads extending from one edge of the substrate, a plurality of output leads extending from an opposite edge of the substrate, a plurality of input ground leads with ground leads positioned between adjacent input leads, and a plurality of output ground leads with ground lead positioned between adjacent output leads. All ground leads are ohmically connected with the current paths between adjacent ground leads reduced in length.

REFERENCES:
patent: 4587548 (1986-05-01), Grabbe et al.
patent: 4925024 (1990-05-01), Ellenberger et al.
patent: 5115298 (1992-05-01), Loh
patent: 5252853 (1993-10-01), Michii
patent: 5252854 (1993-10-01), Arita et al.

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